Skip to main content

Table 2 Parameters

From: Cellular automaton-based model for radiation-induced bystander effects

Parameter Name Value used in simulations
Δ t Time interval 0.1 s
d Width of grid (grid spacing) 10 μm
D 1track Expected value of the absorbed dose given by one radiation track 0.001 Gy
K a Average number of radiation tracks passing through a grid over Δ t 1,000 track/min
M w Diffusion constants of virtual signals through the MDP 1.0×10−10 m 2/s
M α Signal-production constant of virtual signals through the MDP 1 unit/Gy
M β Decay constant of virtual signals through the MDP 4.6×10−6 s −1
G w Diffusion constants of virtual signals through the GJP 5.0×10−11 m 2/s
G α Signal-production constant of virtual signals through the GJP 1 unit/Gy
G β Decay constant of virtual signals through the GJP 1.18×10−3 s −1
ZR λ i,j DSB induction coefficients for radiation G0 or G1 phase
   AV: 40; SD: 22 DSBs/Gy
   S phase
   AV: 80; SD: 24 DSBs/Gy
   G2 phase
   AV: 80; SD: 26 DSBs/Gy
   M1 or M2 phase
   AV: 80; SD: 16 DSBs/Gy
ZM λ i,j DSB induction coefficients for virtual signals through the MDP G0 or G1 phase
   AV: 6.0×10−3; SD: 1.0×10−2 DSBs/unit/s
   S, G2, M1, or M2 phase
   AV: 1.2×10−2; SD: 1.0×10−2 DSBs/unit/s
ZG λ i,j DSB induction coefficients for virtual signals through the GJP G0 or G1 phase
   AV: 6.0×10−2; SD: 1.0×10−2 DSBs/unit/s
   S, G2, M1, or M2 phase
   AV: 1.2×10−1; SD: 1.0×10−2 DSBs/unit/s
ZB λ i,j DSB induction coefficients for background factors G0 or G1 phase
   AV: 1.4×10−5; SD: 0 DSBs/s
   S, G2, M1, or M2 phase
   AV: 2.8×10−5; SD: 0 DSBs/s
Zr λ i,j Probability of DSB repair G0 or G1 phase
   AV: 9.33×10−7; SD: 2.0×10−5 s −1
   S, G2, M1, or M2 phase
   AV: 7.45×10−7; SD: 2.0×10−5 s −1
A H i,j Thresholds for transition between cell-cycle progression and cell-cycle arrest G1/S checkpoint
   AV: 5; SD: 1 DSBs
   S/G2 checkpoint
   AV: 40; SD: 8 DSBs
   G2/M1 checkpoint
   AV: 20; SD: 4 DSBs
   M1/M2 checkpoint
   AV: 40; SD: 8 DSBs
p−RD H i,j Thresholds for transition from the PR to the p-RD state G0 or G1 phase
   AV: 93; SD: 38 DSBs
   S phase
   AV: 42; SD: 144 DSBs
   G2 phase
   AV: 116; SD: 124 DSBs
   M1 or M2 phase
   AV: 22; SD: 91 DSBs
p−ID H i,j Thresholds for transition from the PR to the p-ID state G0 or G1 phase
   AV: 186; SD: 38 DSBs
   S phase
   AV: 84; SD: 144 DSBs
   G2 phase
   AV: 232; SD: 124 DSBs
   M1 or M2 phase
   AV: 44; SD: 91 DSBs
T c Period of each phase of the cell cycle G1 phase
   AV: 11; SD: 2.2 h
   S phase
   AV: 8; SD: 1.6 h
   G2 phase
   AV: 4; SD: 0.8 h
   M1 or M2 phase
   AV: 0.5; SD: 0.1 h
  1. AV: average; SD: standard deviation