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Table 2 Parameters

From: Cellular automaton-based model for radiation-induced bystander effects

Parameter

Name

Value used in simulations

Δ t

Time interval

0.1 s

d

Width of grid (grid spacing)

10 μm

D 1track

Expected value of the absorbed dose given by one radiation track

0.001 Gy

K a

Average number of radiation tracks passing through a grid over Δ t

1,000 track/min

M w

Diffusion constants of virtual signals through the MDP

1.0×10−10 m 2/s

M α

Signal-production constant of virtual signals through the MDP

1 unit/Gy

M β

Decay constant of virtual signals through the MDP

4.6×10−6 s −1

G w

Diffusion constants of virtual signals through the GJP

5.0×10−11 m 2/s

G α

Signal-production constant of virtual signals through the GJP

1 unit/Gy

G β

Decay constant of virtual signals through the GJP

1.18×10−3 s −1

ZR λ i,j

DSB induction coefficients for radiation

G0 or G1 phase

  

AV: 40; SD: 22 DSBs/Gy

  

S phase

  

AV: 80; SD: 24 DSBs/Gy

  

G2 phase

  

AV: 80; SD: 26 DSBs/Gy

  

M1 or M2 phase

  

AV: 80; SD: 16 DSBs/Gy

ZM λ i,j

DSB induction coefficients for virtual signals through the MDP

G0 or G1 phase

  

AV: 6.0×10−3; SD: 1.0×10−2 DSBs/unit/s

  

S, G2, M1, or M2 phase

  

AV: 1.2×10−2; SD: 1.0×10−2 DSBs/unit/s

ZG λ i,j

DSB induction coefficients for virtual signals through the GJP

G0 or G1 phase

  

AV: 6.0×10−2; SD: 1.0×10−2 DSBs/unit/s

  

S, G2, M1, or M2 phase

  

AV: 1.2×10−1; SD: 1.0×10−2 DSBs/unit/s

ZB λ i,j

DSB induction coefficients for background factors

G0 or G1 phase

  

AV: 1.4×10−5; SD: 0 DSBs/s

  

S, G2, M1, or M2 phase

  

AV: 2.8×10−5; SD: 0 DSBs/s

Zr λ i,j

Probability of DSB repair

G0 or G1 phase

  

AV: 9.33×10−7; SD: 2.0×10−5 s −1

  

S, G2, M1, or M2 phase

  

AV: 7.45×10−7; SD: 2.0×10−5 s −1

A H i,j

Thresholds for transition between cell-cycle progression and cell-cycle arrest

G1/S checkpoint

  

AV: 5; SD: 1 DSBs

  

S/G2 checkpoint

  

AV: 40; SD: 8 DSBs

  

G2/M1 checkpoint

  

AV: 20; SD: 4 DSBs

  

M1/M2 checkpoint

  

AV: 40; SD: 8 DSBs

p−RD H i,j

Thresholds for transition from the PR to the p-RD state

G0 or G1 phase

  

AV: 93; SD: 38 DSBs

  

S phase

  

AV: 42; SD: 144 DSBs

  

G2 phase

  

AV: 116; SD: 124 DSBs

  

M1 or M2 phase

  

AV: 22; SD: 91 DSBs

p−ID H i,j

Thresholds for transition from the PR to the p-ID state

G0 or G1 phase

  

AV: 186; SD: 38 DSBs

  

S phase

  

AV: 84; SD: 144 DSBs

  

G2 phase

  

AV: 232; SD: 124 DSBs

  

M1 or M2 phase

  

AV: 44; SD: 91 DSBs

T c

Period of each phase of the cell cycle

G1 phase

  

AV: 11; SD: 2.2 h

  

S phase

  

AV: 8; SD: 1.6 h

  

G2 phase

  

AV: 4; SD: 0.8 h

  

M1 or M2 phase

  

AV: 0.5; SD: 0.1 h

  1. AV: average; SD: standard deviation